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August 1998
NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, RDS(ON) = 0.120 @ VGS = 4.5 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
D
D
S D
SOT-223
S
G D S
G
SOT-223*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
TA = 25oC unless otherwise noted NDT3055L 60 20
(Note 1a)
Units V V A
Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
4 25 3 1.3 1.1 -65 to 150
W
TJ,TSTG RJA RJC
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
C/W C/W
* Order option J23Z for cropped center drain lead.
(c) 1998 Fairchild Semiconductor Corporation
NDT3055L Rev.A1
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 C VDS = 60 V, VGS = 0 V TJ =125C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2)
o
60 55 1 50 100 -100
V mV/o C A A nA nA
BVDSS/TJ
IDSS
VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 oC VGS = 10 V, ID = 4 A TJ =125C VGS = 4.5 V, ID = 3.7 A 1 1.6 -4 0.07 0.125 0.103 10 7
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance
2
V mV /oC
VGS(th)/TJ
RDS(ON)
0.1 0.18 0.12
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Notes:
On-State Drain Current Forward Transconductance
VGS = 5 , VDS = 10 V VDS = 5 V, ID = 4 A VDS = 25, VGS = 0 V, f = 1.0 MHz
A S
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 345 110 30 pF pF pF
SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 40 V, ID = 4 A, VGS = 10 V VDD = 25, ID = 1 A, VGS = 10 V, RGEN = 6 5 7.5 20 7 13 1.7 3.2 20 20 50 20 20 ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A
(Note 2)
2.5 0.8 1.2
A V
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of guaranteed by design while RCA is determined by the user's board design.
the drain pins. RJC is
a. 42oC/W when mounted on a 1 in2 pad of 2oz Cu.
b. 95oC/W when mounted on a pad of 2oz Cu.
0.066 in2
c. 110oC/W when mounted on a 0.00123 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
NDT3055L Rev.A1
Typical Electrical Characteristics
25 I D , DRAIN-SOURCE CURRENT (A) 2
6.0V 4.5V
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS= 10V
20
5.0V
1.8
VGS = 4.0V
1.6 1.4 1.2 1 0.8
15
4.5V 5.0V 6.0V 8.0V 10V
4.0V
10
3.5V
5
3.0V
0
0
1
2
3
4
5
0
5
VDS , DRAIN-SOURCE VOLTAGE (V)
10 15 I D, DRAIN CURRENT (A)
20
25
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
R DS(ON) , ON-RESISTANCE (OHM)
0.28
I D = 4.0 A VGS = 10 V
I D = 2A
0.24 0.2 0.16
R DS(ON), NORMALIZED
TA = 125C
0.12 0.08
25C
0.04 0
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ , JUNCTION TEMPERATURE (C)
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to- Source Voltage.
10 IS , REVERSE DRAIN CURRENT (A)
30
VDS = 5V
ID , DRAIN CURRENT (A) 8
TJ = -55C 25C 125C
10 V GS = 0V 1
TA = 125C 25C -55C
6
0.1 0.01
4
2
0.001 0.0001
0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS , GATE TO SOURCE VOLTAGE (V)
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Current and Temperature.
NDT3055L Rev.A1
Typical Electrical Characteristics (continued)
1000
VGS , GATE-SOURCE VOLTAGE (V) 10
I D = 4A
8
VDS = 10V CAPACITANCE (pF) 30V 40V
500
Ciss
200
6
Coss
100 50
4
Crss f = 1 MHz VGS = 0V
0.3 1 4 10 30 60
2
20 10 0.1
0
0
2
4
6
8
10
12
14
Qg , GATE CHARGE (nC)
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
N) S(O RD IT LIM
80
10 1m
ID , DRAIN CURRENT (A)
10 3 1 0.3 0.1 0.03 0.01 0.1
0u
s
60 POWER (W)
s
10m
10 1s 10 s DC 0m s
SINGLE PULSE RJA =110C/W TA = 25C
s
40
VGS = 10V SINGLE PULSE R JA = 110o C/W TA = 25C
0.2 0.5 1 2
20
5
10
30
60 100
0 0.001
0.01
0.1
1
10
100
300
VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1 0.5 0.2 0.1 0.05 0.02 0.01 0.005
Single Pulse D = 0.5 0.2 0.1 0.05 0.02 0.01
R JA (t) = r(t) * R JA R JA = 110 C/W
P(pk)
t1
t2
0.002 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1
TJ - TA = P * R JA (t) Duty Cycle, D = t1 / t 2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.
NDT3055L Rev.A1
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
F63TNR Label Antistatic Cover Tape
Static Dissipative Embossed Carrier Tape
F852 014
SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1246 0.7250 D84Z TNR 500 7" Dia 184x187x47 1,000 0.1246 0.1532
F852 014
F852 014
F852 014
SOT-223 Unit Orientation
343mm x 342mm x 64mm Intermediate box for Standard
F63TNR Label
F63TNR Label 184mm x 184mm x 47mm Pizza Box for D84Z Option
F63TNR Label sample
LOT: CBVK741B019 FSID: PN2222A QTY: 3000 SPEC:
SOT-223 Tape Leader and Trailer Configuration: Figure 2.0
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-223 (12mm)
A0
6.83 +/-0.10
B0
7.42 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.50 +/-0.10
E1
1.75 +/-0.10
E2
10.25 min
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
1.88 +/-0.10
T
0.292 +/0.0130
Wc
9.5 +/-0.025
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
5.906 150 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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First Production
No Identification Needed
Full Production
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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